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產品特色
DDR3 SODIMM memory (small outline) is a compact industrial standards memory module that fits neatly into any embedded, surveillance and automation setup. DDR3 SODIMM memory comply with all relevant JEDEC standards and are available in 1GB, 2GB, 4GB, and 8GB capacities and with data transfer rates of 1066MT/s, 1333MT/s, 1600MT/s, and 1866MT/s.
DDR3 SODIMM內存（小外框）是一種緊湊的工業標準內存模塊，可巧妙地安裝在任何嵌入式、監控和自動化設置中。DDR3 SODIMM內存符合所有相關JEDEC標準，具有1GB、2GB、4GB和8GB容量，數據傳輸速率分別為1066MT/s、1333MT/s、1600MT/s和1866MT/s。
| Interface | DDR3 |
| Form Factor | SODIMM |
| Data Rate | 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s |
| Capacity | 1GB, 2GB, 4GB, 8GB |
| Function | Non-ECC Unbuffered Memory |
| Pin Number | 204pin |
| Width | 64Bits |
| Voltage | 1.5V, 1.35V |
| PCB Height | 1.18 Inches |
| Operating Temperature | 0°C to 85°C |
| Density |
Component Composition |
Part Number | Rank | Voltage | Description |
| 1GB | 128Mx16 | M3S0-1GSWFLQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
| 2GB | 256Mx16 | M3S0-2GSVFLQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
| 2GB | 256Mx8 | M3S0-2GSJCLQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
| 4GB | 256Mx8 | M3S0-4GSJDLQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
| 4GB | 256Mx16 | M3S0-4GSV0LQE | 2Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
| 4GB | 512Mx8 | M3S0-4GSSCLQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
| 8GB | 512Mx8 | M3S0-8GSSDLQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
| 4GB | 1866MT/s | 256Mx16 | Samsung | 2 | 2 | M3S0-4GSV0CQE |
| 4GB | 1600MT/s | 256Mx16 | Samsung | 2 | 2 | M3S0-4GSV0CPC |
| 4GB | 1333MT/s | 256Mx16 | Samsung | 2 | 2 | M3S0-4GSV0CN9 |
| 4GB | 1866MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0CQE |
| 4GB | 1600MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0CPC |
| 4GB | 1333MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0CN9 |
| 4GB | 1866MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDCQE |
| 4GB | 1600MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDCPC |
| 4GB | 1333MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDCN9 |
| 4GB | 1066MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDCM7 |
| 4GB | 800MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDCL6 |
| 4GB | 1866MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDCQE |
| 4GB | 1600MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDCPC |
| 4GB | 1333MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDCN9 |
| 4GB | 1866MT/s | 512Mx8 | Samsung | 1 | 2 | M3S0-4GSSCCQE |
| 4GB | 1600MT/s | 512Mx8 | Samsung | 1 | 2 | M3S0-4GSSCCPC |
| 4GB | 1333MT/s | 512Mx8 | Samsung | 1 | 2 | M3S0-4GSSCCN9 |
| 4GB | 1866MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCCQE |
| 4GB | 1600MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCCPC |
| 4GB | 1333MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCCN9 |
| 4GB | 1866MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDLQE |
| 4GB | 1600MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDLPC |
| 4GB | 1333MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDLN9 |
| 4GB | 1066MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDLM7 |
| 4GB | 800MT/s | 256Mx8 | Samsung | 2 | 2 | M3S0-4GSJDLL6 |
| 4GB | 1866MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDLQE |
| 4GB | 1600MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDLPC |
| 4GB | 1333MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDLN9 |
| 4GB | 1866MT/s | 256Mx16 | Samsung | 2 | 2 | M3S0-4GSV0LQE |
| 4GB | 1600MT/s | 256Mx16 | Samsung | 2 | 2 | M3S0-4GSV0LPC |
| 4GB | 1333MT/s | 256Mx16 | Samsung | 2 | 2 | M3S0-4GSV0LN9 |
| 4GB | 1866MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0LQE |
| 4GB | 1600MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0LPC |
| 4GB | 1333MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0LN9 |
| 4GB | 1866MT/s | 512Mx8 | Samsung | 1 | 2 | M3S0-4GSSCLQE |
| 4GB | 1600MT/s | 512Mx8 | Samsung | 1 | 2 | M3S0-4GSSCLPC |
| 4GB | 1333MT/s | 512Mx8 | Samsung | 1 | 2 | M3S0-4GSSCLN9 |
| 4GB | 1866MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCLQE |
| 4GB | 1600MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCLPC |
| 4GB | 1333MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCLN9 |
